MRFE6VP61K25H MRFE6VP5600H MRF6VP3450H MRFE6VP100HRRF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFE

MRFE6VP61K25H MRFE6VP5600H MRF6VP3450H MRFE6VP100 HRRF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs NXP Semiconductors

MRFE6VP61K25H Product details

RF Power LDMOS TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETsThese high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.• Typical Performance: VDD = 50 Volts, IDQ = 100 mAFeatures• Unmatched Input and Output Allowing Wide Frequency Range Utilization• Device can be used Single--Ended or in a Push--Pull Configuration• Qualified Up to a Maximum of 50 VDD Operation• Characterized from 30 V to 50 V for Extended Power Range• Suitable for Linear Application with Appropriate Biasing• Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation• Characterized with Series Equivalent Large--Signal Impedance Parameters• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

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